IIST - 2nd Year - Electronic Devices and Circuits

Syllabus

UNIT 1: Semiconductor devices

Semiconductor devices, theory of P-N junction, temperature dependence and break down characteristics, junction capacitances. Zener diode, Varactor diode, PIN diode, LED, Photo diode, Transistors BJT, FET, MOSFET, types, working principal, characteristics, and region of operation, load line biasing method. Transistor as an amplifier, gain, bandwidth, frequency response, Type of amplifier.

UNIT 2: Feedback amplifier

Feedback amplifier, negative feedback, voltage-series, voltage shunt, current series and current shunt feedback, Sinusoidal oscillators, L-C (Hartley-Colpitts) oscillators, RC phase shift, Wien bridge, and Crystal oscillators. Power amplifiers, class A, class B, class A B, C amplifiers, their efficiency and power Dissipation.

UNIT 3: Switching characteristics of diode

Switching characteristics of diode and transistor turn ON, OFF time, reverse recovery time, transistor as switch, Multivibrators, Bistable, Monostable, Astable multivibarators. Clippers and clampers, Differential amplifier, calculation of differential, common mode gain and CMRR using hparameters.

UNIT 4: Operational amplifier

Operational amplifier characteristics, slew rate, full power bandwidth, offset voltage, bias current, application ,inverting , non inverting amplifier , summer, differentiator, integrator, differential amplifier , instrumentation amplifier, log and antilog amplifier , voltage to current and current to voltage converters , comparators Schmitt trigger .

UNIT 5: Introduction to IC

Introduction to IC, Advantages and limitations, IC classification, production process of monolithic IC, fabrication of components on monolithic IC, IC packing, general integrated circuit technology, photolithographic process, un polar IC’s, IC symbols.

Practicals

1. To observe and draw the forward and reverse bias V-I characteristics of a P-N junction diode.
   
2. To study the volt-ampere (V-I) characteristics of zener diode both in forward ans reverse bias.
3. To study and determine the characteristics of NPN transistor in CE configuration.
4. To obtain the drain and transfer characteristics of MOSFET.
5. To study Hartley and colpitts oscillator.
6. To design inventing and non inverting amplifier using op-amp. 
7. Design various application of operational amplifier.
8. to study of application of timer IC 555.
9. To study the push pull amplifier.